Organic light emitting display apparatus and method of manufacturing the same

ABSTRACT

An organic light emitting display apparatus and a method of manufacturing the same are provided. The apparatus includes a substrate, a first electrode formed on the substrate, an intermediate layer formed on the first electrode. The intermediate layer includes an organic emission layer. A second electrode is formed on the intermediate layer, and a capping layer is formed on the second electrode in a first region. The capping layer includes a first edge portion and at least two layers. A third electrode is formed on the second electrode in a second region. The second region is not overlapped with the first region, and the third electrode includes a second edge portion having a side portion facing a side portion of the first edge portion of the capping layer. Electric properties and image quality may be improved.

CROSS-REFERENCE TO RELATED PATENT APPLICATION

This application claims the benefit of Korean Patent Application No.10-2013-0061251, filed on May 29, 2013, in the Korean IntellectualProperty Office, the disclosure of which is incorporated herein in itsentirety by reference.

BACKGROUND

1. Field of the Invention

The present invention relates to an organic light emitting displayapparatus and a method of manufacturing the same, and more particularly,to an organic light emitting display apparatus having improved electricproperties and image quality.

2. Description of the Related Art

Portable and thin film type flat panel apparatus are increasingly usedas display apparatuses. Among flat panel display apparatuses, an organiclight emitting display apparatus is a self-emitting display apparatushaving a wide viewing angle, good contrast and rapid response time, andhas been attracting attention as a next generation display apparatus.

The organic light emitting display apparatus includes an intermediatelayer, a first electrode and a second electrode. The intermediate layerincludes an organic light emitting layer. When a voltage is applied tothe first electrode and the second electrode, visible lights may begenerated from the organic light emitting layer.

In this case, contamination and damage may be generated due to a sealingpart disposed on the second electrode or impurities.

Due to the above-described factors, the improvement of the image qualityand electric properties of the organic light emitting display apparatusmay be limited.

SUMMARY OF THE INVENTION

An organic light emitting display apparatus of which electric propertiesand image quality may be easily improved, and a method of manufacturingthe organic light emitting display apparatus are provided.

According to an aspect, there is provided an organic light emittingdisplay apparatus including a substrate, a first electrode formed on thesubstrate, an intermediate layer formed on the first electrode. Theintermediate layer includes an organic emission layer. A secondelectrode is formed on the intermediate layer and a capping layer isformed on the second electrode in a first region. The capping layerincludes a first edge portion and at least two layers. A third electrodeis formed on the second electrode in a second region. The second regionis not overlapped with the first region, and the third electrodeincludes a second edge portion having a side portion facing another sideportion of the first edge portion of the capping layer.

The third electrode may include a plurality of layers stacked insequence.

The third electrode may include a lower electrode layer and an upperelectrode layer stacked in sequence, and the capping layer may include afirst capping layer and a second capping layer stacked in sequence.

The third electrode may include a single layer, and the capping layermay include a first capping layer and a second capping layer stacked insequence.

The third electrode may include a lower electrode layer and an upperelectrode layer stacked in sequence, and the capping layer may include afirst capping layer, a second capping layer, a third capping layer and afourth capping layer stacked in sequence.

A thickness of the third electrode may be greater than the thickness ofthe second electrode.

The adhesiveness between the third electrode and the capping layer maybe smaller than the adhesiveness between the third electrode and thesecond electrode.

The capping layer may include 8-quinolinolato lithium,N,N-diphenyl-N,N-bis(9-phenyl-9H-carbazol-3-yl)biphenyl-4,4′-diamine),N(diphenyl-4-yl)9,9-dimethyl-N-(4(9-phenyl-9H-carbazol-3-yl)phenyl)-9H-fluorene-2-amine),or2-(4-(9,10-di(naphthalene-2-yl)anthracene-2-yl)phenyl)-1-phenyl-1H-benzo-[D]imidazole.

The third electrode may include Mg.

The apparatus may include a light-transmitting area for transmitting anexternal light and a pixel area adjacent to the light-transmitting areaand emitting light. The light-transmitting area and the pixel area maybe positioned in the first region, and the first electrode may beoverlapped with the pixel area.

The apparatus may further include a thin film transistor including anactive layer, a gate electrode, a source electrode and a drainelectrode, the thin film transistor making an electric connection withthe first electrode, and the first electrode may be disposed so as toshield the thin film transistor.

The capping layer may be light-transmitting. All of edge portions of thecapping layer and an edge portion of the third electrode may make be incontact with one another.

An area of the capping layer may be greater than an area emitting lightin one pixel.

According to another aspect, there is provided a method of manufacturingan organic light emitting display apparatus including forming a firstelectrode on a substrate, forming an intermediate layer including anorganic emission layer on the first electrode, forming a secondelectrode on the intermediate layer, and forming a capping layer on thesecond electrode in a first region. The capping layer has a first edgeportion and at least two layers. A third electrode is formed on thesecond electrode in a second region. The second region is not overlappedwith the first region, and the third electrode includes a second edgeportion having a side portion facing a side portion of the first edgeportion of the capping layer.

The third electrode and the capping layer may be formed throughconducting a deposition process.

The adhesiveness between a metal for forming the third electrode and thecapping layer may be smaller than the adhesiveness between the metal forforming the third electrode and the second electrode.

The capping layer may be formed by using a mask including a slit part ofcorresponding pattern of the capping layer.

The third electrode may be formed by using an open mask including anopening over the capping layer.

The third electrode may be formed by performing a deposition processwithout using a mask.

The forming of the capping layer may include forming a first layerdisposed on the second electrode among at least two layers of thecapping layer by using a mask having a slit part of correspondingpattern of the capping layer, and forming a remaining layer of thecapping layer by using an open mask including an opening over thecapping layer.

The forming of the capping layer may include forming a first layerdisposed on the second electrode among at least two layers of thecapping layer by using a mask having a slit part of correspondingpattern of the capping layer, and forming a remaining layer of thecapping layer without using a mask.

The forming of the third electrode may be conducted after forming atleast one layer of the capping layer.

The forming of the third electrode and the capping layer may includeforming a first layer disposed on the second electrode among at leasttwo layers of the capping layer by using a mask having a slit part ofcorresponding pattern of the capping layer, and forming the thirdelectrode and a remaining layer of the capping layer by using an openmask in a co-deposition process, the open mask including an opening overthe first layer of the capping layer.

The third electrode may include a plurality of electrode layers stackedin sequence.

The forming of the third electrode and the capping layer may includeforming a lowermost layer making a contact with the second electrodeamong the plurality of the layers of the capping layer by using a maskincluding a slit part of corresponding pattern of the capping layer, andforming a lowermost electrode layer making a contact with the secondelectrode among the plurality of the electrode layers of the thirdelectrode by using an open mask including an opening over the lowermostlayer of the capping layer.

The method may include forming a remaining layer excluding the lowermostlayer among the plurality of the layers of the capping layer by using amask having a slit part of corresponding pattern of the capping layer,and forming a remaining layer excluding the lowermost electrode layeramong the plurality of the electrode layers of the third electrode byusing an open mask.

The method may include forming the remaining layer excluding thelowermost layer among the plurality of the layers of the capping layerby using the open mask, and forming the remaining layer excluding thelowermost electrode layer among the plurality of the electrode layers ofthe third electrode by using the open mask.

The forming of the third electrode and the capping layer may includealternately disposing a plurality of first deposition sources includinga material for forming the capping layer and a plurality of seconddeposition sources including a material for forming the third electrode,and moving the substrate including the second electrode so as tocorrespond the substrate to the plurality of the first depositionsources and the plurality of the second deposition sources one by one.

The forming of the third electrode and the capping layer may includeforming a layer disposed on the second electrode among at least twolayers of the capping layer by using a mask having a slit part ofcorresponding pattern of the capping layer, and forming at least onelayer of the third electrode and at least one layer of the remaininglayer of the capping layer at the same time by using an open mask bymeans of a co-deposition process, the open mask including a opening overthe capping layer.

According to the organic light emitting display apparatus and the methodof manufacturing the organic light emitting display apparatus accordingto the present disclosure, electric properties and image quality may beeasily improved.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages will become more apparent bydescribing example embodiments with reference to the attached drawingsin which:

FIG. 1 is a schematic cross-sectional view of an organic light emittingdisplay apparatus according to an example embodiment;

FIG. 2 is a schematic cross-sectional view of an organic light emittingdisplay apparatus according to another example embodiment;

FIG. 3 is an enlarged view of X in FIG. 1;

FIG. 4 is an enlarged view of Y1 and Y2 in FIG. 3;

FIGS. 5 to 10 illustrate a method of manufacturing the organic lightemitting display apparatus in FIG. 1 in sequence;

FIGS. 11 to 13 illustrate various embodiments of the shapes of a cappinglayer of the organic light emitting display apparatus in FIG. 1;

FIGS. 14 to 17 illustrate another example embodiment of a method ofmanufacturing the organic light emitting display apparatus in FIG. 1;

FIG. 18 illustrates another example embodiment of a method ofmanufacturing the organic light emitting display apparatus in FIG. 1;

FIG. 19 is a cross-sectional view of an organic light emitting displayapparatus according to another example embodiment;

FIG. 20 is an enlarged view of Y1 and Y2 in FIG. 19;

FIGS. 21 & 22 illustrate a method of manufacturing the organic lightemitting display apparatus in FIG. 19;

FIG. 23 is a cross-sectional view of an organic light emitting displayapparatus according to another example embodiment;

FIG. 24 is an enlarged view of Y1 and Y2 in FIG. 23;

FIGS. 25 to 28 illustrate a method of manufacturing the organic lightemitting display apparatus in FIG. 23 in sequence;

FIGS. 29 to 32 illustrate another method of manufacturing the organiclight emitting display apparatus in FIG. 23 in sequence;

FIG. 33 is a plan view illustrating an organic light emitting displayapparatus according to another example embodiment;

FIG. 34 is a cross-sectional view illustrating one pixel of the organiclight emitting display apparatus in FIG. 33; and

FIG. 35 is a plan view illustrating an organic light emitting displayapparatus according to another example embodiment.

DETAILED DESCRIPTION OF THE INVENTION

Reference will now be made in detail to embodiments, examples of whichare illustrated in the accompanying drawings, wherein like referencenumerals refer to like elements throughout. In this regard, the presentembodiments may have different forms and should not be construed asbeing limited to the descriptions set forth herein. Accordingly, exampleembodiments are merely described below, by referring to the figures, toexplain aspects of the present description.

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items.

Hereinafter, the constitution and operation will be explained in detailwith reference to example embodiments illustrated in attached drawings.

FIG. 1 is a schematic cross-sectional view of an organic light emittingdisplay apparatus according to an example embodiment.

Referring to FIG. 1, an organic light emitting display apparatusaccording to an embodiment includes an organic light emitting part 110formed on a substrate 101 and a encapsulation substrate 191 for sealingthe organic light emitting part 110.

The encapsulation substrate 191 may be formed to include alight-transmitting material, so that visible light generated at theorganic light emitting part 110 may penetrate the encapsulationsubstrate 191, and the encapsulation substrate 191 may prevent thepenetration of external gas and humidity into the organic light emittingpart 110.

The substrate 101 and the encapsulation substrate 191 may be combined bya sealing material 150, and a space 25 between the substrate 101 and theencapsulation substrate 191 may be sealed. In the space 25, a moistureabsorbent material or a filler may be disposed.

FIG. 2 is a schematic cross-sectional view of an organic light emittingdisplay apparatus according to another example embodiment.

In the organic light emitting display apparatus 100′ in FIG. 2, aencapsulation layer 192 of a thin film may be formed on an organic lightemitting part 110′ instead of forming the encapsulation substrate 191 inFIG. 1, so as to protect the organic light emitting part 110′ fromexternal air. The encapsulation layer 192 may be obtained by alternatelyforming a layer including an inorganic material, such as, for example,silicon oxide or silicon nitride, and a layer including an organicmaterial, such as, for example, epoxy and polyimide, without limitation.Any sealing structure on a light-transmitting thin film may beapplicable.

FIG. 3 is an enlarged view of a region X outlined in FIG. 1, and FIG. 4is an enlarged view of regions Y1 and Y2 outlined in FIG. 3. Moreparticularly, FIG. 3 illustrates one pixel of the organic light emittingpart 110 illustrated in FIG. 1. Alternatively, FIG. 3 may illustrate onepixel of the organic light emitting part 110′ illustrated in FIG. 2.

Referring to FIG. 3, a buffer layer 102 is formed on a substrate 101,and a thin film transistor TR is formed on the buffer layer 102. Thethin film transistor TR includes an active layer 103, a gate electrode105, a source electrode 107 and a drain electrode 108.

Even though only one thin film transistor TR is illustrated in FIG. 3,the pixel may constitute a pixel circuit by further including at leastone other thin film transistor and a capacitor.

The active layer 103 is formed on the buffer layer 102.

The buffer layer 102 may prevent the penetration of impurity elementsand may function to planarize the surface thereof. The buffer layer 102may be formed by using various materials that may perform theabove-mentioned functions. For example, the buffer layer 102 may beformed by using an inorganic material such as silicon oxide, siliconnitride, silicon oxynitride, aluminum oxide, aluminum nitride, titaniumoxide, titanium nitride, etc., or an organic material such as polyimide,polyester, acryl, etc., or may be formed as a stacked structure thereof.The buffer layer 102 may be omitted.

The active layer 103 may be formed of amorphous silicon, polycrystallinesilicon or organic semiconductor material, but is not necessarilylimited thereto. The active layer 103 may be formed by using an oxidesemiconductor. For example, the active layer 103 may be a G-I—Z—O layer[(In₂O₃)a(Ga₂O₃)b(ZnO)c layer] (in which a, b and c are real numberssatisfying a≧0, b≧0 and c≧0, respectively).

A gate insulating layer 104 covering the active layer 103 is formed onthe buffer layer 102, and a gate electrode 105 is formed on the gateinsulating layer 104.

An interlayer insulating layer 106 is formed on the gate insulatinglayer 104 to cover the gate electrode 105, and a source electrode 107and a drain electrode 108 are formed on the interlayer insulating layer106 and make respective contact with the active layer 103 throughcontact holes.

The structure of the above-described thin film transistor TR is notnecessarily limited thereto, and various types of the structures of thethin film transistor may be applicable. For example, the thin filmtransistor TR illustrated in FIG. 3 may have a top gate structure.Alternatively, a thin film transistor TR of a gate bottom gate structuremay be used. Alternatively, other applicable structures of all of thethin film transistors may be applied.

A pixel circuit (not illustrated) including a capacitor along with thethin film transistor TR may be formed.

A passivation layer 109 covering the pixel circuit including the thinfilm transistor TR is formed. The passivation layer 109 may be aninsulating layer having a planarized upper surface of a single layer ora plurality of layers. The passivation layer 109 may be formed by usingan inorganic material and/or an organic material.

On the passivation layer 109, an organic light emitting device EL isformed so as to make an electric connection with the thin filmtransistor TR. The organic light emitting device EL includes a firstelectrode 121, a second electrode 122 and an intermediate layer 120.

Particularly, the first electrode 121 is formed so as to make anelectric connection with the drain electrode 108.

On the passivation layer 109, a pixel defining layer 119 covering theedge portion of the first electrode 121 is formed. The pixel defininglayer 119 includes an opening portion 119 a positioned to correspond tothe center portion of the first electrode 121.

On the first electrode 121 exposed through the opening portion 119 a,the intermediate layer 120 including an organic emission layer is formedand the second electrode 122 covering the intermediate layer 120 isformed.

The intermediate layer may include a low molecular weight organic layeror a high molecular weight organic layer. When the low molecular weightorganic layer is used, a hole injection layer (HIL), a hole transportlayer (HTL), an emission layer (EML), an electron transport layer (ETL),an electron injection layer (EIL), etc. may be used as a single layerstructure or as a stacked complex structure. The low molecular weightorganic layer may be formed by means of a vacuum deposition method.

The HIL may be formed by using, for example, a phthalocyanine compoundsuch as copper phthalocyanine, etc. or a starburst type amine such astris(4-carbazoyl-9-ylphenyl)amine (TCTA),4,4′,4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA),1,3,5-tris[4-(2-methylphenylphenylamino)phenyl]benzene (m-MTDAPB), etc.

The HTL may be formed by using, for example,N,N′-bis(3-methylphenyl)-N,N′-diphenyl-[1,1-biphenyl]-4,4′-diamine(TDP), N,N′-di(naphthalene-1-yl)-N,N′-diphenylbenzidine (α-NPD), etc.

The EIL may be formed by using, for example, a material such as LiF,NaCl, CsF, Li₂O, BaO, 8-hydroxy-quinolinato lithium (Liq), etc.

The ETL may be formed by using, for example, tris(8-hydroxy)aluminium(Alq3).

The EML may include a host material and a dopant material. The EML mayinclude an emission layer emitting various colors of visible light. Inaddition, the disposition of the EML may be diversely defined and may bedisposed so as to produce different colors according to the pixels.However, the present disclosure may not be limited to theabove-described embodiments. Color filters of different colors may bedisposed according to the desired colors of the pixels after stacking aplurality of emission layers so as to accomplish white light withrespect to the whole pixels according to a white light emitting method.

The first electrode 121 may function as an anode electrode, and thesecond electrode 122 may function as a cathode electrode. Alternatively,the polarities of the first electrode 121 and the second electrode 122may be interchanged.

When the first electrode 121 functions as the anode electrode, the firstelectrode 121 may include a material having a high work function suchas, for example, ITO, IZO, ZnO, In₂O₃, etc. and may additionally includea reflection layer formed by using, for example, Ag, Mg, Al, Pt, Pd, Au,Ni, Nd, Ir, Cr, Li, Yb, Ca, etc.

When the second electrode 122 functions as a cathode electrode, thesecond electrode 122 may be formed by using a metal such as, forexample, Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, etc. Inaddition, the second electrode 122 may include, for example, ITO, IZO,ZnO, In₂O₃, etc. for the light transmission. In addition, the secondelectrode 122 may be formed as a thin film by using, for example, Al, Agand/or Mg. The second electrode 122 is formed so that a common voltagemay be applied to all of the pixels, and is thus formed as a commonelectrode which is not patterned to correspond to the pattern of thepixels. Alternatively, the second electrode 122 as the common electrodemay be patterned in a mesh shape obtained by removing portions of thecommon electrode except for those overlapping the light emittingregions.

When the second electrode 122 is formed as the common electrode, avoltage drop may be generated at the second electrode 122. Particularly,when the apparatus in FIG. 3 is a top emitting type apparatus in which auser may view an image from the upper portion in FIG. 3, the sheetresistance of the second electrode 122 may be increased because thesecond electrode 122 includes a light-transmitting metal oxide or ametal thin film. In this case, the generated voltage drop may be evenlarger.

In order to solve the above-described defects, a third electrode 130making an electric connection with the second electrode 122 may befurther formed in the present disclosure.

In addition, the upper surface of the second electrode 122 may bedamaged due to the encapsulation substrate 191 illustrated in FIG. 1.The upper surface of the second electrode 122 may also be easily damagedduring the formation of the encapsulation layer 192 in FIG. 2. In orderto solve the above-described defects, a capping layer 140 is formed onthe second electrode 122.

The capping layer 140 is formed on the second electrode 122 in a firstregion R1 and has a first edge portion 140 a.

The third electrode 130 is formed on the second electrode 122 in asecond region R2 and has a second edge portion 130 a. The thirdelectrode 130 is disposed adjacent to the capping layer 140 whilemaintaining a horizontal state.

The area of a first region R1 is larger than an area generating lightemission in at least one pixel, and corresponds to a region covering theregion generating the light emission in one pixel. The capping layer 140is formed on the whole first region R1, and the edge portion of thefirst region R1 is the first edge portion 140 a of the capping layer140. The second region R2 corresponds to a region excluding the firstregion R1 from the second electrode 122. The third electrode 130 isformed on the whole second region R2, and the edge portion of the secondregion R2 is the second edge portion 130 a of the third electrode 130.The second region R2 is a region excluding the area generating the lightemission.

The side portion of the first edge portion 140 a of the capping layer140 and the side portion of the second edge portion 130 a of the thirdelectrode 130 are in contact with each other.

The third electrode may be formed to have a thickness greater than thatof the second electrode 122 so as to decrease the sheet resistance ofthe second electrode 122.

Because the capping layer 140 may cover the region generating the lightemission in the pixel, the capping layer 140 may be formed so as totransmit light. The capping layer 140 may be formed as a thin film layerhaving a thickness smaller than the third electrode 130, however, thethickness of the capping layer 140 is not limited thereto.

In an example embodiment, the material of the third electrode 130 andthe capping layer 140 may be selected so that adhesiveness between thethird electrode 130 and the capping layer 140 may be smaller than thatbetween the third electrode 130 and the second electrode 122.

The capping layer may be formed by using, for example, a materialincluding 8-quinolinolato lithium (Liq),N,N-diphenyl-N,N-bis(9-phenyl-9H-carbazol-3-yl)biphenyl-4,4′-diamine,N(diphenyl-4-yl)9,9-dimethyl-N-(4(9-phenyl-9H-carbazol-3-yl)phenyl)-9H-fluorene-2-amine,or2-(4-(9,10-di(naphthalene-2-yl)anthracene-2-yl)phenyl)-1-phenyl-1H-benzo-[D]imidazole.

The third electrode 130 may be formed by using, for example, Mg.

Mg used for forming the third electrode 130 is similar to the materialused for forming second electrode 122, that is, both are formed by usingmetals, and the adhesiveness between the third and second electrodes 130and 120 is good. However, the adhesiveness between Mg and the materialof the above-described capping layer 140 is not good. Thus, the thirdelectrode 130 may be simply patterned by using the adhesivenessproperties between the third electrode 130 and the capping layer 140.

As described above, the third electrode 130 is patterned so as to beformed only in the second region R2. However, after forming theintermediate layer 120 of the organic light emitting device EL, thethird electrode 130 may be patterned without having to use a wet processsuch as a photolithography process, which is widely used as a patterningmethod of a common metal layer. When humidity and/or oxygen penetrateinto the intermediate layer 120 while conducting the wet process, thelifetime of the organic light emitting device EL may be rapidlydecreased.

Thus, the patterning of the third electrode 130 is very difficult in apractical process.

According to the present disclosure, the third electrode 130 may bepatterned by using the adhesive properties between the third electrode130 and the capping layer 140. Particular methods will be describedbelow.

The third electrode 130 and the capping layer 140 may each includemultiple layers, respectively.

Referring to FIG. 4, the third electrode 130 includes a lower electrodelayer 131 and an upper electrode layer 132.

In addition, the capping layer 140 includes a first capping layer 141and a second capping layer 142. The first capping layer 141 and thesecond capping layer 142 include the above-described materials of thecapping layer 140 and may be formed by using the same material ordifferent materials.

In order to secure the target thickness of the capping layer 140, thedeposition process is conducted more than once; it is conducted as twoseparate deposition processes. First, the first capping layer 141 isformed and the lower electrode layer 131 is formed. Then, the secondcapping layer 142 is formed and the upper electrode layer 132 is formed.In this case, the patterning of the third electrode 130 and the cappinglayer 140 may be easily conducted, and control of each process to formthe minute pattern of the third electrode 130 and the capping layer 140may be possible. In addition, the third electrode 130 may be easilyprevented from being formed in the first region R1, and thus thetransmittance of the organic light emitting display apparatus 100 may beimproved.

In this example embodiment, the capping layer 140 is formed byconducting the deposition process twice, and the third electrode 130 isformed by conducting the deposition process twice. However, thedeposition process may not be limited thereto, and may be separatelyconducted three or more times.

FIGS. 5 to 10 illustrate a method of manufacturing the organic lightemitting display apparatus illustrated in FIG. 1 in sequence.

First, referring to FIG. 5, elements up to the second electrode 122 areformed on the substrate 101.

Then, referring to FIG. 6, a deposition process is conducted withrespect to the substrate 101 on which the elements up to the secondelectrode 122 are formed. That is, a mask 170 is disposed so as to facethe substrate 101, and the deposition process is conducted by using afirst deposition source S1. The first deposition source S1 includes atleast one material from among the above-described various materials forforming the capping layer 140.

The mask 170 includes a shielding part 171 and a slit part 172. The slitpart 172 has a specific pattern corresponding to a region for formingthe capping layer 140, that is, to the first region R1.

The deposition process by using the first deposition source S1 isconducted to form the first capping layer 141 of the capping layer 140on the second electrode 122 in the first region R1, as illustrated inFIG. 7.

Then, referring to FIG. 8, the deposition process is conducted withrespect to the substrate 101 including the elements formed up to thefirst capping layer 141. That is, an open mask 180 is disposed so as toface the substrate 101, and the deposition process is conducted using asecond deposition source S2. The second deposition source S2 includesthe above-described material for forming the third electrode 130, thatis, Mg. The open mask 180 includes a shield part 181 and an opening part182. The shield part 181 has a similar shape as a square window frame,and the opening part 182 forms the center of the shield part 181. Theopen mask 180 includes the opening part 182 having no specific pattern.That is, different from the above-described mask 170, the open mask 180is formed to pass the deposition material onto the whole surface of thesubstrate 101, including over the capping layer deposited in thepattern, except for those portions of the surface of the substrate thatare blocked by the borders of the shield part 181.

Meanwhile, even though the open mask 180 is provided in this exampleembodiment, the open mask 180 may be omitted when using the seconddeposition source S2 during the deposition process.

Through conducting the deposition process through the second depositionsource S2, the lower electrode layer 131 of the third electrode 130 isformed on the second electrode 122 in the second region R2.

In this case, because the material for forming the third electrode 130included in the second deposition source S2 has poor adhesiveness withthe first capping layer 141, a layer of second deposition source S2material may not be formed on the first capping layer 141, but a layermay be formed only on the exposed portions of second electrode 122, thesecond electrode 122 having relatively good adhesiveness with the seconddeposition source S2 material.

Thus, the lower electrode layer 131 may be naturally patterned withoutusing a separate mask or without conducting a patterning process.Particularly, the whole of the third electrode 130 may be formed byconducting the deposition process more than once. That is, the whole ofthe third electrode 130 may be formed by first forming the lowerelectrode layer 131 to a specific thickness corresponding to half of thedesired thickness of the third electrode 130. In this case, the minutepatterning of the lower electrode layer 131 may be possible.

Then, referring to FIG. 9, the deposition process is conducted withrespect to the substrate 101 including elements formed up to the lowerelectrode layer 131. That is, the mask 170 is disposed so as to face thesubstrate 101 as illustrated in FIG. 6, and the deposition process isconducted using the first deposition source S1 to form the secondcapping layer 142 on the first capping layer 141 in the first region R1,to complete the capping layer 140. Because the mask 170 is the same asthat described above, detailed description thereof will be omitted. Inaddition, because the masks 270 and 370 in this example embodiment arethe same as the mask 170, detailed description thereof will also beomitted.

Referring to FIG. 10, the deposition process is conducted with respectto the substrate 101 including the elements formed up to the secondcapping layer 142. That is, as illustrated in FIG. 8, the open mask 180is disposed so as to face the substrate 101, and the deposition processis conducted using the second deposition source S2 to form the upperelectrode layer 132 on the lower electrode layer 131 in the secondregion R2 to complete the third electrode 130. As described above, theupper electrode layer 132 may be formed by conducting the depositionprocess using the second deposition source S2 without using the openmask 180.

Because the open mask 180 is the same as described above, detaileddescription thereof will be omitted. In addition, because the open masks280 and 380 in a following example embodiment are the same as the openmask 180, detailed description thereof will also be omitted.

In this example embodiment, the first capping layer 141 and the secondcapping layer 142 are formed by using the mask 170 two separate times tocomplete the capping layer 140. Through the processes, the capping layer140 may be easily formed into a target pattern having a targetthickness. Particularly, the minute pattern of the capping layer 140 maybe controlled so that it corresponds to only the first region R1 may bepossible.

In addition, the lower electrode layer 131 and the upper electrode layer132 are formed by using the open mask 180 two separate times to completethe third electrode 130. Particularly, after forming the first cappinglayer 141, the lower electrode layer 131 is formed in the second regionR2 to a desired shape by using the first capping layer 141. In addition,after forming the second capping layer 142, the upper electrode layer132 is formed in the second region R2 to a desired shape by using thesecond capping layer 142. Through the method, the minute patterning ofthe third electrode 130 in the second region R2 without using a maskhaving a specific pattern may be easily accomplished.

FIGS. 11 to 13 illustrate various example embodiments of the shapes of acapping layer of the organic light emitting display apparatus in FIG. 1.

As illustrated in FIG. 11, one capping layer 140 may be provided per onepixel P as an island shape. In FIG. 11, the capping layer 140 has anarea covering the whole area of one pixel P. However, the capping layer140 may have an area covering only the light emitting region of pixel Pas described above, without limitation. In this case, the thirdelectrode 130 may form a lattice pattern between each of the pixels P.

As illustrated in FIG. 12 as another example embodiment, one cappinglayer 140 may be provided for a plurality of the pixels P as an islandshape. In this case, the third electrode 130 may form a lattice patternbetween the pluralities of the pixels P.

As illustrated in FIG. 13 as another example embodiment, the cappinglayer 140 may be provided for a plurality of the pixels P arranged in arow in a stripe shape. In this case, the third electrode 130 may form astripe pattern between each row of the pixels P.

FIGS. 14 to 17 illustrate another example embodiment of a method ofmanufacturing the organic light emitting display apparatus in FIG. 1.

Referring to FIG. 14, a deposition process is conducted with respect toa substrate 101 including the elements formed up to a second electrode122. A mask 170 includes a shield part 171 and a slit part 172. The slitpart 172 has a specific pattern corresponding to a region for forming acapping layer 140, that is, a first region R1.

Through conducting the deposition process using a first depositionsource S1, a first capping layer 141 of the capping layer 140 is formedon the second electrode 122 in the first region R1.

Then, referring to FIG. 15, the deposition process is conducted withrespect to the substrate 101 including the elements formed up to thefirst capping layer 141. That is, an open mask 180 is disposed so as toface the substrate 101, and the deposition process is conducted using asecond deposition source S2. Through conducting the deposition processusing the second deposition source S2, a lower electrode layer 131 ofthe third electrode 130 is formed on the second electrode in a secondregion R2.

Then, referring to FIG. 16, the deposition process is conducted withrespect to the substrate 101 including the elements formed up to thelower electrode layer 131. Particularly, the open mask 180 is disposedso as to face the substrate 101, and the deposition process is conductedby using the first deposition source S1 to form a second capping layer142 on the first capping layer 141 in the first region R1 to completethe capping layer 140. In this case, the material for forming the secondcapping layer 142 included in the first deposition source S1 has goodadhesive properties with respect to the first capping layer 141 and haspoor adhesive properties with respect to the lower electrode layer 131.Thus, a layer of the first deposition source S1 material may not beformed on the lower electrode layer 131, but a layer of the firstdeposition source material S1 may be formed on the first capping layer141 having relatively good adhesiveness.

Then, referring to FIG. 17, the deposition process is conducted withrespect to the substrate 101 including the elements formed up to thesecond capping layer 142. That is, the open mask 180 is disposed so asto face the substrate 101, and the deposition process using the seconddeposition source S2 is conducted to form an upper electrode layer 132on the lower electrode layer 131 in the second region R2 to complete thethird electrode 130.

FIG. 18 illustrates another example embodiment of a method ofmanufacturing the organic light emitting display apparatus illustratedin FIG. 1.

Referring to FIG. 18, the deposition process is continuously conductedwhile moving a substrate 101 that includes elements formed up to secondelectrode 122 along a direction indicated by the arrow A (x-axisdirection). That is, a deposition process is conducted with respect tothe substrate 101 using a first deposition source S1. A mask 170 isdisposed over the substrate 101 to form a first capping layer in a firstregion R1.

Then, the deposition process is conducted using a second depositionsource S2, the first deposition source S1, the second deposition sourceS2, the first deposition source S1 and the second deposition source S2one by one. Particularly, an open mask 180 is disposed over thesubstrate 101 to conduct the deposition process. Alternatively, thedeposition process may be conducted excluding the open mask 180.

Through conducting the above-described processes, a third electrode 130obtained by stacking three layers and a capping layer 140 obtained byintegrating three layers may be easily formed.

FIG. 19 is a cross-sectional view of an organic light emitting displayapparatus according to another example embodiment. FIG. 20 is anenlarged view of the regions Y1 and Y2 shown in FIG. 19. For theconvenience of explanation, different portions from the above-describedexample embodiment will be explained in priority.

Referring to FIGS. 19 and 20, a buffer layer 202 is formed on asubstrate 201, and a thin film transistor TR is formed on the bufferlayer 202. The thin film transistor TR includes an active layer 203, agate electrode 205, a source electrode 207 and a drain electrode 208.

The active layer 203 is formed on the buffer layer 202, a gateinsulating layer 204 covering the active layer 203 is formed, and a gateelectrode 205 is formed on the gate insulating layer 204. An interlayerinsulating layer 206 covering the gate electrode 205 is formed on thegate insulating layer 204. On the interlayer insulating layer 206, asource electrode 207 and a drain electrode 208 are formed andrespectively make contact with the active layer 203 through contactholes. A passivation layer 209 covering a pixel circuit including thethin film transistor TR is formed. On the passivation layer 209, anorganic light emitting device EL making an electric connection with thethin film transistor TR is formed. The organic light emitting device ELincludes a first electrode 221, a second electrode 222 and anintermediate layer 220. Particularly, the first electrode 221 is formedso as to make an electric connection with the drain electrode 208. Onthe passivation layer 209, a pixel defining layer 219 including anopening portion 219 a is formed.

On the first electrode 221, an intermediate layer 220 including anorganic light emission layer is formed, and the second electrode 222covering the intermediate layer 220 is formed.

A third electrode 230 making an electric connection with the secondelectrode 222 is formed, and a capping layer 240 is formed on the secondelectrode 222.

The capping layer 240 is formed on the second electrode 222 in the firstregion R1, and has a first edge portion 240 a.

The third electrode 230 is formed on the second electrode 222 in thesecond region R2, and has a second edge portion 230 a. The thirdelectrode 230 is disposed adjacent to the capping layer 240 whilemaintaining a horizontal state.

The side portion of the first edge portion 240 a of the capping layer240 and the side portion of the second edge portion 230 a of the thirdelectrode 230 may contact each other.

The third electrode 230 may be formed to have a thickness greater thanthe second electrode 222 so as to decrease the sheet resistance of thesecond electrode 222.

Because the capping layer 240 may cover the region of emitting light inthe pixel, the capping layer 240 may be formed so as to transmit light.The capping layer 240 may be formed as a thin film layer having athickness smaller than the third electrode 230, however, the thicknessof the capping layer 240 is not limited thereto.

As illustrated in an example embodiment, the materials of the thirdelectrode 230 and the capping layer 240 may be selected so that theadhesiveness between the third electrode 230 and the capping layer 240is smaller than the adhesiveness between the third electrode 230 and thesecond electrode 222.

The capping layer 240 includes multiple layers in this exampleembodiment.

Referring to FIG. 20, the capping layer 240 includes a first cappinglayer 241 and a second capping layer 242. The first capping layer 241and the second capping layer 242 may include the above-describedmaterials of the capping layer 240, and may be formed by using the samematerial or different materials.

In order to achieve the target thickness of the capping layer 240, thedeposition process may be conducted more than one time. Particularly,the deposition process is conducted two separate times. That is, afterforming the first capping layer 241, the third electrode 230 and thesecond capping layer 242 are formed at the same time, as describedbelow. Through the above-described processes, the third electrode 230and the capping layer 240 may be easily patterned and controlled, andthe minute pattern of each layer may be possible. In addition, theformation of the third electrode 230 in the first region R1 may beeasily prevented to improve the transmittance of the organic lightemitting display apparatus 200.

FIGS. 21 and 22 illustrate a method of manufacturing the organic lightemitting display apparatus illustrated in FIG. 19.

First, referring to FIG. 21, a deposition process is conducted withrespect to the substrate 201. Even though not illustrated, elements upto the second electrode 222 are formed on the substrate 201.

A mask 270 is disposed so as to face the substrate 201, and thedeposition process is conducted using the first deposition source S1.The mask 270 includes a shielding part 271 and a slit part 272. The slitpart 272 includes a specific pattern corresponding to a region forforming the capping layer 240, that is, the first region R1.

Through conducting the deposition process by using the first depositionsource S1, the first capping layer 241 of the capping layer 240 isformed on the second electrode 222 in the first region R1.

Then, referring to FIG. 22, the deposition process is conducted withrespect to the substrate 201 including the elements formed up to thefirst capping layer 241. That is, an open mask 280 is disposed so as toface the substrate 201, and a co-deposition process using the firstdeposition source S1 and the second deposition source S2 is conducted.Alternatively, the use of the open mask 280 may be omitted.

Through conducting the co-deposition process by using the firstdeposition source S1 and the second deposition source S2, the thirdelectrode 230 is formed on the second electrode 222 in the second regionR2, and the second capping layer 242 is formed on the first cappinglayer 241 in the first region R1.

In this case, because the adhesiveness of the material for forming thethird electrode 230 included in the second deposition source S2 with thefirst capping layer 241 is not good, a layer may not be formed on thefirst capping layer 241. However, a layer may be formed on the secondelectrode 222 having relatively good adhesiveness. Similarly, thematerial for forming the second capping layer 242 included in the firstdeposition source S1 may be formed on the first capping layer 241 havingrelatively good adhesiveness.

Thus, the third electrode 230 and the second capping layer 242 may benaturally patterned without using a separate mask or without conductinga separate patterning process.

In this example embodiment, after forming the first capping layer 241using the mask 270, the second capping layer 242 is formed using theopen mask 280 to complete the capping layer 240. Through conducting theabove-described processes, the capping layer 240 may be easily formed asa pattern having a target thickness. Particularly, the minute pattern ofthe capping layer 240 corresponding to only the first region R1 may bepossible.

In addition, the third electrode 230 is formed while depositing thesecond capping layer 242 using the open mask 280. Through conducting theprocesses, the minute patterning of the third electrode 230 in thesecond region R2 without using a mask having a specific pattern may beeasily accomplished.

FIG. 23 is a cross-sectional view of an organic light emitting displayapparatus according to another example embodiment. FIG. 24 is anenlarged view of regions Y1 and Y2 shown in FIG. 23. For the convenienceof the explanation, different portions from the above-described exampleembodiment will be explained in priority.

Referring to FIGS. 23 and 24, a buffer layer 302 is formed on asubstrate 301, and a thin film transistor TR is formed on the bufferlayer 302. The thin film transistor TR includes an active layer 303, agate electrode 305, a source electrode 307 and a drain electrode 308.

On the buffer layer 302, the active layer 303 is formed, a gateinsulating layer 304 covering the active layer 303 is formed, and thegate electrode 305 is formed on the gate insulating layer 304. Aninterlayer insulating layer 306 covering the gate electrode 305 isformed on the gate insulating layer 304, and the source electrode 307and the drain electrode 308 are formed on the interlayer insulatinglayer 306 to respectively make contact with the active layer 303 throughcontact holes. A passivation layer 309 covering a pixel circuitincluding the thin film transistor TR is formed. On the passivationlayer 309, an organic light emitting device EL making an electricconnection with the thin film transistor TR is formed. The organic lightemitting device EL includes a first electrode 321, a second electrode322 and an intermediate layer 320. Particularly, the first electrode 321is formed so as to make an electric connection with the drain electrode308. On the passivation layer 309, a pixel defining layer 319 includingan opening portion 319 a is formed.

On the first electrode 321, the intermediate layer 320 including theorganic light emission layer is formed, and the second electrode 322covering the intermediate layer 320 is formed.

A third electrode 330 is formed so as to make an electric connectionwith the second electrode, and a capping layer 340 is formed on thesecond electrode 322.

The capping layer 340 is formed on the second electrode 322 in the firstregion R1 and has a first edge portion 340 a.

The third electrode 330 is formed on the second electrode 322 in thesecond region R2 and has a second edge portion 330 a. The thirdelectrode 330 is disposed adjacent to the capping layer 340 whilemaintaining a horizontal state.

The side portion of the first edge portion 340 a of the capping layer340 and the side portion of the second edge portion 330 a of the thirdelectrode 330 contact each other.

The third electrode 330 may be formed to have a thickness greater thanthe second electrode 322 so as to decrease the sheet resistance of thesecond electrode 322.

Because the capping layer 340 may cover a region emitting light in thepixel, the capping layer may be formed so as to transmit the light. Thecapping layer 340 may be formed as a thin film layer having a thicknesssmaller than the third electrode 330, however, the thickness of thecapping layer 340 is not limited thereto.

In an example embodiment, the materials for forming the third electrode330 and the capping layer 340 may be selected so that the adhesivenessbetween the third electrode 330 and the capping layer 340 is smallerthan the adhesiveness between the third electrode 330 and the secondelectrode 322.

The capping layer 340 and the third electrode 330 each include multiplelayers.

Referring to FIG. 24, the third electrode 330 includes a lower electrodelayer 331 and an upper electrode layer 332. In addition, the cappinglayer 340 includes a first capping layer 341, a second capping layer342, a third capping layer 343 and a fourth capping layer 344. The firstcapping layer 341 to the fourth capping layer 344 may be formed by usingthe same material or different materials.

In order to achieve the target thickness of the capping layer 340, thedeposition process may be conducted more than one time. The depositionprocess is conducted multiple times, particularly, four times. Inaddition, in order to achieve the target thickness of the thirdelectrode 330, the deposition process may be conducted two times.

That is, after forming the first capping layer 341, the lower electrodelayer 331 and the second capping layer 342 are formed at the same time.After forming the third capping layer 343, the upper electrode layer 332and the fourth capping layer 344 are formed at the same time. Particularexplanation will be described herein below.

Through conducting the above-described processes, the patterning of thethird electrode 330 and the capping layer 340 may be easily conductedand controlled, and the minute pattern for each layer may be possible.In addition, the formation of the third electrode 330 in the firstregion R1 may be easily prevented, and the transmittance of the organiclight emitting display apparatus 300 may be improved.

FIGS. 25 to 28 illustrate a method of manufacturing the organic lightemitting display apparatus illustrated in FIG. 23 in sequence.

Referring to FIG. 25, a deposition process is conducted with respect tothe substrate 301. Even though not illustrated, the elements up tosecond electrode 322 are formed on the substrate 301.

A mask 370 is disposed so as to face the substrate 301, and thedeposition process is conducted by using a first deposition source S1.The mask includes a shielding part 371 and a slit part 372. The slitpart 372 has a specific pattern corresponding to a region for formingthe capping layer 340, that is, the first region R1.

Through conducting the deposition process by using the first depositionsource S1, the first capping layer 341 of the capping layer 340 isformed on the second electrode 322 in the first region R1.

Referring to FIG. 26, the deposition process is conducted with respectto the substrate 301 including the elements formed up to the firstcapping layer 341. That is, an open mask 380 is disposed so as to facethe substrate 301, and a co-deposition process using the firstdeposition source S1 and the second deposition source S2 is conducted.Alternatively the use of the open mask 380 may be omitted.

Through conducting the co-deposition process by using the firstdeposition source S1 and the second deposition source S2, the lowerelectrode layer 331 is formed on the second electrode 322 in the secondregion R2, and the second capping layer 342 is formed on the firstcapping layer 341 in the first region R1.

In this case, the material for forming the lower electrode layer 331 ofthe third electrode 330 included in the second deposition source S2 haspoor adhesiveness with the first capping layer 341. Thus, a layer ofdeposition source S2 material may not be formed on the first cappinglayer 341, but a layer of deposition source S2 material may be formed onthe second electrode 322 having relatively good adhesiveness. Similarly,the material for forming the second capping layer 342 included in thefirst deposition source S1 may be formed on the first capping layer 341having relatively good adhesiveness.

Then, referring to FIG. 27, the deposition process is conducted withrespect to the substrate 301 including the elements formed up to thelower electrode layer 331 and the second capping layer 342.

After disposing the mask 370 so as to face the substrate 301, thedeposition process is conducted by using the first deposition source S1.The deposition process through the first deposition source S1 isconducted to form the third capping layer 343 on the second cappinglayer 342 in the first region R1.

Then, referring to FIG. 28, the deposition process is conducted withrespect to the substrate 301 including the elements formed up to thethird capping layer 343. That is, the open mask 380 is disposed so as toface the substrate 301, and the co-deposition process using the firstdeposition source S1 and the second deposition source S2 is conducted.Alternatively, the use of the open mask 380 may be omitted.

Through conducting the co-deposition process using the first depositionsource S1 and the second deposition source S2, the upper electrode layer332 is formed on the lower electrode layer 331 in the second region R2,and the fourth capping layer 344 is formed on the third capping layer343 in the first region R1.

In this case, the material for forming the upper electrode layer 332 ofthe third electrode 330 included in the second deposition source S2 haspoor adhesiveness with the third capping layer 343. Thus, a layer of thesecond deposition source S2 material may not be formed on the thirdcapping layer 343, but a layer of the second source S2 material may beformed on the lower electrode layer 331 having relatively goodadhesiveness. Similarly, the material for forming the fourth cappinglayer 344 included in the first deposition source S1 may form a layer onthe third capping layer 343 having relatively good adhesiveness

In this example embodiment, after forming the first capping layer 341using the mask 370, the second capping layer 342 and the lower electrodelayer 331 are formed using the open mask 380 at the same time. Inaddition, after forming the third capping layer 343 using the mask 370,the fourth capping layer 344 and the upper electrode layer 332 areformed using the open mask 380 at the same time.

Through conducting the above-described processes, the capping layer 340having a pattern with a target thickness may be easily formed.Particularly, the minute pattern of the capping layer 340 may becontrolled so as to correspond to only the first region R1 may bepossible.

In addition, while depositing the second capping layer 342 and thefourth capping layer 344 using the open mask 380, the lower electrodelayer 331 and the upper electrode layer 332 of the third electrode 330may be formed at the same time. Thus, the minute patterning of the thirdelectrode 330 in the second region R2 without using a specific patternmask may be easily conducted.

FIGS. 29 to 32 illustrate another method of manufacturing the organiclight emitting display apparatus illustrated in FIG. 23 in sequence.

First, referring to FIG. 29, a deposition process is conducted withrespect to the substrate 301. Even though not illustrated, the elementsup to second electrode 322 are formed on the substrate 301.

A mask 370 is disposed so as to face the substrate 301, and thedeposition process is conducted using the first deposition source S1.The mask 370 includes the shielding part 371 and the slit part 372. Theslit part 372 has a specific pattern corresponding to a region forforming the capping layer 340, that is, the first region R1.

Through conducting the deposition process by using the first depositionsource S1, the first capping layer 341 of the capping layer 340 isformed on the second electrode 322 in the first region R1.

Referring to FIG. 30, the deposition process is conducted with respectto the substrate 301 including the elements formed up to the firstcapping layer 341. That is, the open mask 380 is disposed so as to facethe substrate 301, and the co-deposition process is conducted using thefirst deposition source S1 and the second deposition source S2.Alternatively, the use of the open mask 380 may be omitted.

Through conducting the co-deposition process using the first depositionsource S1 and the second deposition source S2, the lower electrode layer331 is formed on the second electrode 322 in the second region R2, andthe second capping layer 342 is formed on the first capping layer 341 inthe first region R1.

In this case, the material for forming the lower electrode layer 331 ofthe third electrode 330 included in the second deposition source S2 haspoor adhesiveness with the first capping layer 341. Thus, a layer of thesecond deposition source S2 material may not be formed on the firstcapping layer 341, but a layer of the second deposition source S2material may be formed on the second electrode 322 having relativelygood adhesiveness. Similarly, the material for forming the secondcapping layer 342 included in the first deposition source S1 may form alayer on the first capping layer 341 having relatively goodadhesiveness.

Then, referring to FIG. 31, the deposition process is conducted withrespect to the substrate 301 including the elements formed up to thelower electrode layer 331 and the second capping layer 342.

After disposing the mask 380 so as to face the substrate 301, thedeposition process is conducted by using the first deposition source S1.Through conducting the deposition process by using the first depositionsource S1, the third capping layer 343 is formed on the second cappinglayer 342 in the first region R1. In this case, the material for formingthe third capping layer included in the first deposition source S1 hasgood adhesiveness with the second capping layer 342 but has pooradhesiveness with the lower electrode layer 331. Thus, a layer of thefirst deposition source S1 material may not be formed on the lowerelectrode layer 331, but a layer of the first deposition source S1material may be formed on the second capping layer 342 having relativelygood adhesiveness.

Referring to FIG. 32, the deposition process is conducted with respectto the substrate 301 including the elements formed up to the thirdcapping layer 343. That is, the open mask 380 is disposed so as to facethe substrate 301, and the co-deposition process using the firstdeposition source S1 and the second deposition source S2 is conducted.Alternatively, the use of the open mask 380 may be omitted.

Through conducting the co-deposition process by using the firstdeposition source S1 and the second deposition source S2, the upperelectrode layer 332 is formed on the lower electrode layer 331 in thesecond region R2, and the fourth capping layer 344 is formed on thethird capping layer 343 in the first region R1.

In this case, the material for forming the upper electrode layer 332 ofthe third electrode 330 included in the second deposition source S2 haspoor adhesiveness with the third capping layer. Thus, a layer of thesecond deposition source S2 material may not be formed on the thirdcapping layer 343, but a layer of the second deposition source S2material may be formed on the lower electrode layer 331 havingrelatively good adhesiveness. Similarly, the material for forming thefourth capping layer 344 included in the first deposition source S1 mayform a layer on the third capping layer 343 having relatively goodadhesiveness.

In this example embodiment, after forming the first capping layer 341using the mask 370, the second capping layer 342 and the lower electrodelayer 331 are formed using the open mask 380 at the same time. Then,after forming the third capping layer 343 using the open mask 380, thefourth capping layer 344 and the upper electrode layer 332 are formedusing the open mask 380 at the same time.

Through conducting the above-described processes, the capping layer 340having a target pattern to a target thickness may be easily formed.Particularly, the minute pattern of the capping layer 340 may becontrolled so as to correspond only to the first region R1 may bepossible.

In addition, while depositing the second capping layer 342 and thefourth capping layer 344 using the open mask 380, the lower electrodelayer 331 and the upper electrode layer 332 of the third electrode 330may be formed at the same time. Thus, the minute patterning of the thirdelectrode 330 in the second region R2 without using a mask having aspecific pattern may be easily accomplished.

FIG. 33 is a plan view illustrating an organic light emitting displayapparatus according to another example embodiment, and FIG. 34 is across-sectional view illustrating one pixel of the organic lightemitting display apparatus in FIG. 33.

The organic light emitting display apparatus 400 includes alight-transmitting area TA formed to transmit an external light, and aplurality of pixel areas PA separated from each on either side of thelight-transmitting area TA.

As illustrated in FIG. 33, a pixel circuit part PC is positioned in eachof the pixel areas PA, and a plurality of conductive lines such as ascan line S, a data line D and a power source line V are electricallyconnected to the pixel circuit part PC. Even though not illustrated,various conductive lines apart from the scan line S, the data line D andthe power source line V may be provided according to the constitution ofthe pixel circuit part PC.

In addition, the pixel circuit part PC includes a first thin filmtransistor T1 connected to the scan line S and the data line D, a secondthin film transistor T2 connected to the first thin film transistor T1and the power source line V, and a capacitor Cst connected to the firstthin film transistor T1 and the second thin film transistor T2. In thiscase, the first thin film transistor T1 may be a switching transistor,and the second thin film transistor T2 may be a driving transistor. Thesecond thin film transistor T2 is electrically connected to the firstelectrode 421. The number of the above-described thin film transistorsand the capacitor is not limited to that of the illustrated exampleembodiment, and two or more thin film transistors and one or morecapacitors may be combined according to the pixel circuit part PC.

Referring to FIG. 33, the scan line S and the first electrode 421 aredisposed overlapping each other. However, example embodiments are notlimited thereto. At least one of the plurality of the conductive linesincluding the scan line S, the data line D and the power source line Vmay be disposed overlapping the first electrode 421. Alternatively, allof the plurality of the conductive lines including the scan line S, thedata line D and the power source line V may be disposed overlapping thefirst electrode 421, or may be disposed adjacent to the first electrode421 according to the design requirements.

In this example embodiment, distortion due to the scattering of theexternal light due to the patterns of the devices in the pixel circuitpart PC may be prevented.

The pixel area PA and the light-transmitting area TA are formed so thatthe ratio of the area of the light-transmitting area TA to the totalarea of the pixel area PA and the light-transmitting area TA is in therange of from about 5% to about 90%.

When the ratio of the area of the light-transmitting area TA to thetotal area of the pixel area PA and the light-transmitting area TA isless than about 5%, it may be difficult for a user to observe an objector an image positioned at the opposite side of the organic lightemitting display apparatus 400. That is, the transparency of the organiclight emitting display apparatus 400 is poor. However, when theintensity of an external light is high, even if the ratio of the area ofthe light-transmitting area TA to the total area of the pixel area PAand the light-transmitting area TA is about 5%, a user may be able tovisually recognize an object or an image positioned at the opposite sideof the organic light emitting display apparatus 400. Thus, the user mayrecognize the organic light emitting display apparatus 400 as alight-transmitting display apparatus.

When the ratio of the area of the light-transmitting area TA to thetotal area of the pixel area PA and the light-transmitting area TAexceeds about 90%, it may be difficult to generate a stable imagethrough the light emitting in the pixel area PA. That is, as the area ofthe pixel area PA decreases, the luminance of the light emitted from theintermediate layer 420 is to be increased to generate a stable image.When the luminance of the light emitted from the organic light emittingdevice is increased as described above, the lifetime of the organiclight emitting device may be rapidly decreased.

The ratio of the area of the light-transmitting area TA to the totalarea of the pixel area PA and the light-transmitting area TA may be inthe range of from about 20% to about 70%.

When the ratio of the area of the light-transmitting area TA to thetotal area of the pixel area PA and the light-transmitting area TA isless than about 20%, the area of the pixel area PA is excessively largewhen compared with the light-transmitting area TA. Thus, a user mayperceive the limit in observing the image at the opposite positionthrough the light-transmitting area TA. When the ratio exceeds about70%, the design of the pixel circuit part PC to be disposed in the pixelarea PA may be limited.

In the pixel area PA, the first electrode 421, which is electricallyconnected to the pixel circuit part PC, may be provided. The pixelcircuit part PC may be overlapped by the first electrode 421 so as to beshielded by the first electrode 421. In addition, at least one of theconductive lines including the above-described scan line S, the dataline D and the power source line V may be disposed so as to cross thefirst electrode 421. Alternatively, because these conductive lines havea smaller inhibition ratio on the transmittance when compared with thepixel circuit part PC, all of the conductive lines may be disposedadjacent to the first electrode 421 according to design constraints.

As described above, when the first electrode 421 includes a reflectionlayer manufactured by using a conductive metal for reflecting light, thefirst electrode 421 may shield the pixel circuit part PC, and thedistortion of the external image due to the pixel circuit part PC in thepixel area PA may be prevented.

As illustrated in FIG. 34, the pixel area PA and the light-transmittingarea TA are positioned in the first region R1.

In this case, because the capping layer 440 is positioned in the firstregion R1, all of the pixel area PA and the light-transmitting area TAmay be covered. In addition, the third electrode 430 is provided in thesecond region R2 which is at the outer region of the first region R1.

In this example embodiment, because the capping layer 440 useslight-transmitting organic materials as described above, the lighttransmittance in the light-transmitting area TA may not be affected. Thestructure, the material, the manufacturing method, etc. of the cappinglayer 440 and the third electrode 430 are the same as those described inthe above-described embodiments.

Even though not illustrated in the drawings, the light transmittance inthe light-transmitting area TA may be increased by forming alight-transmitting window by excluding at least a portion of the secondelectrode 430 in the light-transmitting area TA. In this case, thelight-transmitting window may be further formed on at least one layeramong the pixel defining layer 419, the passivation layer 409, theinterlayer insulating layer 406, the gate insulating layer 404 and thebuffer layer 402, let alone the second electrode 430 by removing aportion of the second electrode 430.

FIG. 35 is a plan view illustrating an organic light emitting displayapparatus according to another example embodiment. Particularly, FIG. 35illustrates three plan views corresponding to three sub-pixels of anorganic light emitting display apparatus 500.

Referring to FIG. 35, one light-transmitting area TA corresponding tofirst electrodes 521 a, 521 b and 521 c of the three sub-pixels isformed. The first data line D1 to third data line D3 are electricallyconnected with the first electrodes 521 a, 521 b and 5421 c of the threesub-pixels, respectively. In addition, a first power source line V1makes an electric connection with the first electrode 521 a and thesecond first electrode 521 b, and a second power source line V2 makes anelectric connection with the third first electrode 521 c.

In this structure, one large light-transmitting area TA may be providedwith respect to a plurality of the sub-pixels. Thus, the transmittanceof the total display may be increased even higher, and the imagedistortion due to the scattering of light may be decreased still more.

Even though not illustrated, a light-transmitting window may be furtherformed on at least one layer of a second electrode, a pixel defininglayer, a passivation layer, an insulating interlayer, a gate insulatinglayer and a buffer layer in the light-transmitting area TA.

In addition, in this example embodiment, the light-transmitting area TAand the pixel area PA are disposed in the first region (notillustrated), and a capping layer (not illustrated) is disposed in thefirst region (not illustrated) to cover the light-transmitting area TAand the pixel area PA. In addition, a third electrode (not illustrated)may be formed in the second region which is the outer region of thefirst region (not illustrated).

While the present disclosure has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the present disclosure, including the following claims.

What is claimed is:
 1. A method of manufacturing an organic lightemitting display apparatus comprising: forming a first electrode on asubstrate; forming an intermediate layer including an organic emissionlayer on the first electrode; forming a second electrode on theintermediate layer; forming a capping layer on the second electrode in afirst region, the capping layer having a first edge portion and at leasttwo layers; and forming a third electrode on the second electrode in asecond region, the second region being not overlapped with the firstregion, the third electrode including a second edge portion having aside portion facing a side portion of the first edge portion of thecapping layer, and wherein the third electrode comprises a plurality ofelectrode layers stacked in sequence.
 2. The method of manufacturing anorganic light emitting display apparatus of claim 1, wherein the thirdelectrode and the capping layer are formed through a deposition process.3. The method of manufacturing an organic light emitting displayapparatus of claim 1, wherein an adhesiveness between a metal forforming the third electrode and the capping layer is smaller than anadhesiveness between the metal for forming the third electrode and thesecond electrode.
 4. The method of manufacturing an organic lightemitting display apparatus of claim 1, wherein the forming the cappinglayer includes using a mask having a slit part that corresponds to apattern of the capping layer.
 5. The method of manufacturing an organiclight emitting display apparatus of claim 1, wherein the forming thethird electrode includes using an open mask including an opening overthe capping layer.
 6. The method of manufacturing an organic lightemitting display apparatus of claim 1, wherein the forming the thirdelectrode includes performing a deposition process without using a mask.7. The method of manufacturing an organic light emitting displayapparatus of claim 1, wherein the forming of the capping layercomprises: forming a first layer disposed on the second electrode amongat least two layers of the capping layer by using a mask having a slitpart that corresponds to a pattern of the capping layer; and forming aremaining layer of the capping layer by using an open mask including anopening over the capping layer.
 8. The method of manufacturing anorganic light emitting display apparatus of claim 1, wherein the formingof the capping layer comprises: forming a first layer disposed on thesecond electrode among at least two layers of the capping layer by usinga mask having a slit part that corresponds to a pattern of the cappinglayer; and forming a remaining layer of the capping layer without usinga mask.
 9. The method of manufacturing an organic light emitting displayapparatus of claim 1, wherein the forming of the third electrode isconducted after forming at least one layer of the capping layer.
 10. Themethod of manufacturing an organic light emitting display apparatus ofclaim 1, wherein the forming of the third electrode and the cappinglayer comprises: forming a first layer disposed on the second electrodeamong at least two layers of the capping layer by using a mask having aslit part that corresponds to a pattern of the capping layer; andforming the third electrode and a remaining layer of the capping layerby using an open mask in a co-deposition process, the open maskincluding an opening over the first layer of the capping layer.
 11. Themethod of manufacturing an organic light emitting display apparatus ofclaim 1, wherein the forming of the third electrode and the cappinglayer comprises: forming a lowermost layer in contact with the secondelectrode among the plurality of the layers of the capping layer byusing a mask having a slit part that corresponds to a pattern of thecapping layer; and forming a lowermost electrode layer in contact withthe second electrode among the plurality of the electrode layers of thethird electrode by using an open mask including an opening over thelowermost layer of the capping layer.
 12. The method of manufacturing anorganic light emitting display apparatus of claim 11, comprising:forming a remaining layer excluding the lowermost layer among theplurality of the layers of the capping layer by using a mask having aslit part that corresponds to the pattern of the capping layer; andforming a remaining electrode layer excluding the lowermost electrodelayer among the plurality of the electrode layers of the third electrodeby using an open mask.
 13. The method of manufacturing an organic lightemitting display apparatus of claim 11, comprising: forming theremaining layer excluding the lowermost layer among the plurality of thelayers of the capping layer by using the open mask; and forming theremaining electrode layer excluding the lowermost electrode layer amongthe plurality of the electrode layers of the third electrode by usingthe open mask.
 14. The method of manufacturing an organic light emittingdisplay apparatus of claim 1, wherein the forming of the third electrodeand the capping layer comprises: alternately disposing a plurality offirst deposition sources including a material for forming the cappinglayer and a plurality of second deposition sources including a materialfor forming the third electrode; and moving the substrate including thesecond electrode so as to position the substrate corresponding to theplurality of the first deposition sources and the plurality of thesecond deposition sources one by one.
 15. The method of manufacturing anorganic light emitting display apparatus of claim 1, wherein the formingof the third electrode and the capping layer comprises: forming a layerdisposed on the second electrode among at least two layers of thecapping layer by using a mask having a slit part that corresponds to apattern of the capping layer; and forming at least one electrode layerof the third electrode and at least one layer of a remaining layer ofthe capping layer at the same time by using an open mask in aco-deposition process, the open mask including an opening over thecapping layer.